2N5321 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

17.5

175

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 80 V

for 2N5320

VCB = 60 V

for 2N5321

0.5

µA

IEBO

Collector Cut-off

Current (IC = 0)

VEB = 5 V

for 2N5320

VEB = 4 V

for 2N5321

0.1

0.5

µA

V(BR)CEV

Collector-Emitter

Breakdown Voltage

(VBE = 1.5V)

IC = 100

µA

for 2N5320

for 2N5321

100

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

for 2N5320

for 2N5321

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 100

µA

for 2N5320

for 2N5321

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 500 mA

IB = 50 mA

for 2N5320

for 2N5321

0.5

0.8

VBE

∗

Base-Emitter Voltage

IC = 500 mA

VCE = 4 V

for 2N5320

for 2N5321

1.1

1.4

hFE

∗

DC Current Gain

for 2N5320

IC = 500 mA

VCE = 4 V

IC = 1 A

VCE = 2 V

for 2N5321

IC = 500 mA

VCE = 4 V

130

250

Transition Frequency

IC = 50 mA

VCE = 4 V

f = 10 MHz

MHz

ton

Turn-on Time

IC = 500 mA

VCC = 30 V

IB1 = 50 mA

toff

Turn-off Time

IC = 500 mA

VCC = 30 V

IB1 = -IB2 = 50 mA

800

∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %

2N5320/2N5321

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