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STTH4R02 Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH4R02 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  October 2006 Rev 2 1/13 13 STTH4R02 Ultrafast recovery diode Main product characteristics Features and benefits ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, DPAK, SMB, SMC, and DO-201AB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Order codes IF(AV) 4 A VRRM 200 V Tj (max) 175° C VF (typ) 0.76 V trr (typ) 16 ns Part Number Marking STTH4R02D STTH4R02 STTH4R02FP STTH4R02 STTH4R02B STTH4R02 STTH4R02B-TR STTH4R02 STTH4R02U 4R2U STTH4R02 STTH4R02 STTH4R02RL STTH4R02 STTH4R02S 4R2S K K K K K K K NC K A A A A A A A TO-220AC STTH4R02D TO-220FPAC STTH4R02FP DPAK STTH4R02B SMB STTH4R02U SMC STTH4R02S DO-201AB STTH4R02 www.st.com |
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