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TS13007BCZ Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13007BCZ Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TS13007B High Voltage NPN Transistor 1/5 Version: A07 TO-220 PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007BCZ C0 TO-220 50pcs / Tube Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 8 Collector Current Pulse IC 16 A DC 4 Base Current Pulse IB 8 A Total Power Dissipation PD 80 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single Pulse. PW = 300uS, Duty ≤2% Pin Definition: 1. Base 2. Collector 3. Emitter |
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