CSD87313DMST datasheet(4/15 Pages) TI2

4 / 15 page

VGS - Gate-To-Source Voltage (V)

D006

TC = 25°C, I D = 23 A

TC = 125°C, I D = 23 A

TC - Case Temperature (°C)

-75

-50

-25

100

125

150

175

0.4

0.6

0.8

1.2

1.4

1.6

1.8

D008

VGS = 2.5 V

VGS = 4.5 V

IS1S2 - Source1-to-Source2 Current (A)

90 100 110 120

0.5

0.75

1.25

1.5

D004

VG1S1 = 3 V

VG1S1 = 3.5 V

VG1S1 = 4 V

VG1S1 = 4.5 V

IS1S2 - Source1-to-Source2 Current (A)

90 100 110 120

0.5

0.75

1.25

1.5

1.75

D004

VGS = 3 V

VGS = 3.5 V

VGS = 4 V

VGS = 4.5 V

VS1S2 - Source1-to-Source2 Voltage (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

108

120

D002

VGS = 3 V

VGS = 3.5 V

VGS = 4 V

VGS = 4.5 V

VS1S2 - Source1-to-Source2 Voltage (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

108

120

D001

VG1S1 = 3 V

VG1S1 = 3.5 V

VG1S1 = 4 V

VG1S1 = 4.5 V

CSD87313DMS

SLPS642 – APRIL 2017

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5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

Pulse width = 250 µs, duty cycle = 0.5%

VG2S2 = 4.5 V

Figure 1. Saturation Characteristics

Pulse width = 250 µs, duty cycle = 0.5%

Figure 2. Saturation Characteristics

Pulse width = 250 µs, duty cycle = 0.5%

VG2S2 = 4.5 V

Figure 3. Saturation Characteristics

Pulse width = 250 µs, duty cycle = 0.5%

Figure 4. Saturation Characteristics

IS1S2 = 23 A

VGS = 15 V

Figure 5. Normalized On-State Resistance vs Temperature

Figure 6. On-State Resistance vs Gate-to-Source Voltage

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