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LPC662IM/NOPB Datasheet(PDF) 2 Page - Texas Instruments

No. de pieza LPC662IM/NOPB
Descripción Electrónicos  LPC662 Low Power CMOS Dual Operational Amplifier
PDF  20 Pages
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Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
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LPC662IM/NOPB Datasheet(HTML) 2 Page - Texas Instruments

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LPC662
Low Power CMOS Dual Operational Amplifier
General Description
The LPC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltage from +5V to +15V, rail-to-rail output swing
in addition to an input common-mode range that includes
ground. Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this design.
Input V
OS, drift, and broadband noise as well as voltage gain
(into 100 k
Ω and5kΩ) are all equal to or better than widely
accepted bipolar equivalents, while the power supply
requirement is typically less than 0.5 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational
amplifier and LPC661 for a single CMOS operational
amplifier with these same features.
Applications
n
High-impedance buffer
n
Precision current-to-voltage converter
n
Long-term integrator
n
High-impedance preamplifier
n
Active filter
n
Sample-and-Hold circuit
n
Peak detector
Features
n
Rail-to-rail output swing
n
Micropower operation (<0.5 mW)
n
Specified for 100 k
Ω and5kΩ loads
n
High voltage gain
120 dB
n
Low input offset voltage
3 mV
n
Low offset voltage drift
1.3 µV/˚C
n
Ultra low input bias current
2 fA
n
Input common-mode includes GND
n
Operating range from +5V to +15V
n
Low distortion
0.01% at 1 kHz
n
Slew rate
0.11 V/µs
n
Full military temperature range available
Application Circuit
Howland Current Pump
DS010548-23
August 2000
© 2001 National Semiconductor Corporation
DS010548
www.national.com



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