D30SC4M datasheet(1/2 Pages) ISC

No. de pieza	D30SC4M

Descripción Electrónicos	Schotty Barrier Diode

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Schotty Barrier Diode

D30SC4M

www.iscsemi.com

1

FEATURES

· Low VF

· High Recovery Speed

· Full Molded

APPLICATIONS

· Switching Power Supply (SPS)

· Telecommunication

· DC/DC Converter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

40

V

IF(AV)

Average Rectified Forward Current

15×2

A

IFSM

Non-repetitive Peak Surge Current

(Surge applied at rated load conditions

half-wave, single phase, 50Hz)

300

A

TJ

Max. Junction Temperature

150

℃

Tstg

Storage Temperature Range

-40~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.6

℃

/W

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D30SC4M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

D30SC4M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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