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ADRF5060BCCZN-R7 Datasheet(PDF) 4 Page - Analog Devices

No. de pieza ADRF5060BCCZN-R7
Descripción Electrónicos  Nonreflective RF Path Selector SP3T with Bypass, 100MHz to 20GHz
PDF  16 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
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ADRF5060BCCZN-R7 Datasheet(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5060
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 16
Table 1. Specifications (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT LINEARITY
0.1dB Power Compression
P0.1dB
f = 0.1GHz to 20GHz
External Path A or External Path B Selected
>33
dBm
Through Path
>33
dBm
Third-Order Intercept
IP3
Two-tone input power (PIN) = 15dBm continuous wave per tone,
f = 0.1GHz to 20GHz, Δf = 1MHz
External Path A or External Path B Selected
58
dBm
Through Path
57
dBm
SUPPLY CURRENT
Positive
IDD
160
μA
Negative
ISS
500
μA
DIGITAL CONTROL INPUTS
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.45
V
Current
Low
IINL
V1 and V2 pins
<1
μA
XC pin
<1
μA
High
IINH
V1 and V2 pins
<1
μA
XC pin
33
μA
RECOMMENDED OPERATING CONDITIONS
Positive Supply Voltage
VDD
3.15
3.45
V
Negative Supply Voltage
VSS
−3.45
−3.15
V
Digital Control Input Voltage
V1 and V2
0
VDD
V
RF Input Power
f = 0.1GHz to 20GHz, TCASE = 85°C, life time
External Path A or External Path B Selected
RF signal is applied to RFIN or selected external RF path
Average
30
dBm
Peak
33
dBm
Through Path
RF signal is applied to RFIN or RFOUT ports
Average
30
dBm
Peak
33
dBm
Terminated Path
RF signal is applied to unselected (off) external RF paths
Average
18
dBm
Hot Switching
For RFIN and OUT
RF signal is applied to RFIN or RFOUT while switching
30
dBm
For INA, INB, OUTA, and OUTB
RF signal is applied to external RF path while switching
18
dBm
TCASE
–40
+105
°C



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