Data Sheet

ADRF5422

Die on Carrier, Silicon SPDT Switch, Nonreflective, 100 MHz to 55 GHz

Rev. 0

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FEATURES

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Ultrawideband frequency range: 100 MHz to 55 GHz

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Nonreflective design

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Low insertion loss

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1.3 dB typical to 18 GHz

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1.9 dB typical to 40 GHz

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2.5 dB typical to 50 GHz

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3.6 dB typical to 55 GHz

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High isolation

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43 dB typical to 40 GHz

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38 dB typical to 55 GHz

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High input linearity

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0.1 dB power compression (P0.1dB): 31 dBm

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Third-order intercept (IP3): 53 dBm

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High power handling at TCASE = 85°C

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30 dBm through path

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24 dBm terminated path

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30 dBm hot switching

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RF settling time (0.1 dB final RF output): 30 ns

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No low-frequency spurious signals

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All-off state control

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Positive control interface: CMOS-/LVTTL-compatible

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15-pad, 3.021 mm × 2.305 mm bare die [CHIP]

APPLICATIONS

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Test and instrumentation

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Cellular infrastructure: 5G millimeterwave (mmW)

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Military radios, radars, and electronic countermeasures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

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Industrial scanners

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5422 is a nonreflective, SPDT switch manufactured in

the silicon process attached on a gallium arsenide (GaAs) carrier

substrate. The substrate incorporates the bond pads for chip and

wire assembly. The bottom of the device is metalized and connect-

ed to ground.

This device operates from 100 MHz to 55 GHz with a typical

insertion loss of 3.6 dB and isolation of 38 dB at 55 GHz. The

ADRF5422 has an RF input power handling capability of 30 dBm

for the through path, 24 dBm for the terminated path, and 30 dBm

for the hot switching.

The ADRF5422 requires a positive supply of +3.3 V and a negative

supply of −3.3 V. The device employs complementary metal-oxide

semiconductor (CMOS)-/low voltage transistor to transistor logic

(LVTTL)-compatible controls.

The ADRF5422 can operate with a single positive supply voltage

(VDD) applied while the negative supply voltage (VSS) is connected

to ground. In this operating condition, the small signal performance

is maintained while the switching characteristics, linearity, and pow-

er handling performance is derated. For more details, see Table 2.

The ADRF5422 is designed to match a characteristic impedance of

50 Ω and can operate from −40°C to +105°C.