isc N-Channel MOSFET Transistor

STP3NC60

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V; ID= 0.25mA

600

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 600V; VGS= 0V

--

--

1

μ

A

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0V

--

--

±

100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 250μA

2.0

--

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 1.5A

--

--

3.6

Ω

VSD

Forward On-Voltage

IS=3.0A; VGS= 0V

--

--

1.6

V

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