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CSD17381F4.B Datasheet(PDF) 7 Page - Texas Instruments

No. de pieza CSD17381F4.B
Descripción Electrónicos  CSD17381F4 30-V N-Channel FemtoFET™ MOSFET
PDF  13 Pages
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Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
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CSD17381F4.B Datasheet(HTML) 7 Page - Texas Instruments

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6 Device and Documentation Support
6.1 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
6.2 Trademarks
FemtoFET™ are trademarks of Texas Instruments.
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
6.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
6.4 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com
CSD17381F4
SLPS411G – APRIL 2013 – REVISED JANUARY 2022
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: CSD17381F4



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