BAT54SW datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

Symbol

Parameters

Tests conditions

Min.

Typ.

Max.

Unit

VF *

Forward voltage drop

Tj = 25

°CIF = 0.1 mA

240

IF = 1 mA

320

IF = 10 mA

400

IF = 30 mA

500

IF = 100 mA

900

IR **

Reverse leakage current

Tj = 25

°CVR =30 V

µA

Tj = 100

°C

100

Pulse test :

* tp = 380

µs, δ <2%

** tp = 5 ms,

δ <2%

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameters

Tests conditions

Min.

Typ.

Max.

Unit

Junction

capacitance

Tj=25

°CVR = 1 V F = 1 MHz

trr

Reverse recovery

time

IF =10 mA IR =10 mA Tj = 25

°C

Irr = 1 mA

RL = 100

Ω

5ns

DYNAMIC CHARACTERISTICS (Tj = 25

°C)

Symbol

Parameters

Value

Unit

Rth (j-a)

Junction to ambient (*)

SOD-323

550

°C/W

SOT-323

°C/W

(*) Mounted on epoxy board, with recommended pad layout.

THERMAL RESISTANCE

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50

0.00E+0

2.00E-3

4.00E-3

6.00E-3

8.00E-3

1.00E-2

1.20E-2

1.40E-2

1.60E-2

1.80E-2

2.00E-2

VFM(V)

IFM(A)

Tj=100

°C

Tj=50

°C

Tj=25

°C

Fig. 1-1: Forward voltage drop versus forward

current (typical values, low level).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

1E-3

1E-2

1E-1

5E-1

VFM(V)

IFM(A)

Tj=100

°C

Tj=50

°C

Tj=25

°C

Fig. 1-2: Forward voltage drop versus forward

current (typical values, high level).

BAT54J / W / AW / CW / SW

2/5

BAT54SW Datasheet(PDF) 2 Page - STMicroelectronics

BAT54SW Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5

Datasheet Descarga

Enlace URL