 |
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
|
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
10ETS12SLHM3 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
10ETS12SLHM3 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  High Voltage Rectifier Diode 10ETS12SLHM3 www.iscsemi.com 1 FEATURES · Low Forward Voltage Drop · Glass Passivated Pellet Chip Junction · SMD Package APPLICATIONS · EV/HEV Battery Charges · Input Rectifications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1200 V IF(AV) Average Rectified Forward Current TC= 105℃ 10 A IFSM Non-repetitive Peak Surge Current (10ms pulse, no voltage reapplied) 160 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W 2 2 3 1 |
Número de pieza similar - 10ETS12SLHM3 |
|
Descripción similar - 10ETS12SLHM3 |
|
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Mexican ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
