BD533 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

for BD533/534

VCB =45 V

for BD535/536

VCB =60 V

for BD537/538

VCB =80 V

100

µA

ICES

Collect or Cut-off

Current (VBE =0)

for BD533/534

VCE =45 V

for BD535/536

VCE =60 V

for BD537/538

VCE = 80 V

100

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =100 mA

for BD533/534

for BD535/ 536

for BD537/ 538

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =2 A

IB =0.2 A

IC =6 A

IB = 0.6 A

0.8

VBE

∗

Base-Emitt er Voltage

IC =2 A

VCE =2 V

1.5

hFE

∗

DC Current G ain

IC =10 mA

VCE =5 V

for BD533/ 534

for BD535/ 536

for BD537/ 538

IC =500 mA

VCE =2 V

IC =2 A

VCE =2 V

for BD533/ 534

for BD535/ 536

for BD537/ 538

Transit ion f requency

IC =500 mA

VCE =1 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Areas

BD533/BD534/BD535/BD536/BD537/BD538

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