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FN6294 Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza FN6294
Descripción Electrónicos  100V, 2A Peak, High Frequency Half-Bridge Drivers
PDF  12 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FN6294 Datasheet(HTML) 4 Page - Renesas Technology Corp

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ISL2100A, ISL2101A
FN6294 Rev 4.2
Page 4 of 11
Oct 17, 2023
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD, VHB - VHS (Notes 4, 5) . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on LO (Note 5) . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on HO (Note 5) . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V
Voltage on HS (Continuous) (Note 5) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V
Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . 100mA
Maximum Recommended Operating Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 14V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V
Voltage on HB . . VHS + 8V to VHS + 14V and VDD - 1V to VDD + 100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
DFN (Notes 6, 7) . . . . . . . . . . . . . . . . .
47
3.5
SOIC (Notes 8, 9). . . . . . . . . . . . . . . . .
107
50
Max Power Dissipation at +25°C in Free Air (DFN, Note 6). . . 2.27W
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4. The ISL2100A-ISL2101A are capable of derated operation at supply voltages exceeding 14V. Figure 22 shows the high-side voltage derating
curve for this mode of operation.
5. All voltages referenced to VSS unless otherwise specified.
6. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
7. For θJC, the case temperature is measured at the center of the exposed metal pad on the package underside. See TB379 for details.
8. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board.
9. For θJC, the case temperature is measured at the center top of the package. See TB379 for details.
Electrical Specifications
VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified. Parameters with MIN
and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production
tested.
PARAMETERS
SYMBOL
TEST CONDITIONS
TJ = +25°C
TJ = -40°C to
+125°C
UNITS
MIN
TYP
MAX
MIN
MAX
SUPPLY CURRENTS
VDD Quiescent Current
IDD
ISL2100A; LI = HI = 0V
-
0.1
0.25
-
0.3
mA
VDD Quiescent Current
IDD
ISL2101A; LI = HI = 0V
-
0.3
0.45
-
0.55
mA
VDD Operating Current
IDDO
ISL2100A; f = 500kHz
-
1.6
2.2
-
2.7
mA
VDD Operating Current
IDDO
ISL2101A; f = 500kHz
-
1.9
2.5
-
3
mA
Total HB Quiescent Current
IHB
LI = HI = 0V
-
0.1
0.15
-
0.2
mA
Total HB Operating Current
IHBO
f = 500kHz
-
2.0
2.5
-
3
mA
HB to VSS Current, Quiescent
IHBS
LI = HI = 0V; VHB = VHS = 114V
-
0.05
1
-
10
µA
HB to VSS Current, Operating
IHBSO
f = 500kHz; VHB = VHS = 114V
-
0.9
-
-
-
mA
INPUT PINS
Low Level Input Voltage Threshold
VIL
ISL2100A
3.7
4.4
-
2.7
-
V
Low Level Input Voltage Threshold
VIL
ISL2101A
1.4
1.8
-
1.2
-
V
High Level Input Voltage Threshold
VIH
ISL2100A
-
6.6
7.4
-
8.4
V
High Level Input Voltage Threshold
VIH
ISL2101A
-
1.8
2.2
-
2.4
V
Input Voltage Hysteresis
VIHYS
ISL2100A
-
2.2
-
-
-
V
Input Pull-down Resistance
RI
-
210
-
100
500
k
UNDERVOLTAGE PROTECTION
VDD Rising Threshold
VDDR
6.8
7.3
7.8
6.5
8.1
V



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