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LPC660IM/NOPB Datasheet(PDF) 2 Page - Texas Instruments

No. de pieza LPC660IM/NOPB
Descripción Electrónicos  LPC660 Low Power CMOS Quad Operational Amplifier
PDF  27 Pages
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Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
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LPC660IM/NOPB Datasheet(HTML) 2 Page - Texas Instruments

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LPC660
SNOS554D – MAY 1998 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Differential Input Voltage
±Supply Voltage
Supply Voltage (V+
− V−)
16V
Output Short Circuit to V+
(2)
Output Short Circuit to V−
(3)
Lead Temperature
(Soldering, 10 sec.)
260°C
Storage Temp. Range
−65°C to +150°C
Junction Temperature (4)
150°C
ESD Rating
(C = 100 pF, R = 1.5 k
Ω)
1000V
Power Dissipation
(4)
Current at Input Pin
±5 mA
Current at Output Pin
±18 mA
Voltage at Input/Output Pin
(V+) + 0.3V, (V−)
− 0.3V
Current at Power Supply Pin
35 mA
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
(2)
Do not connect output to V+when V+ is greater than 13V or reliability may be adversely affected.
(3)
Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or
multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30
mA over long term may adversely affect reliability.
(4)
The maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(max)–TA)θJA.
Operating Ratings
(1)
Temperature Range
LPC660AM
−55°C ≤ TJ ≤ +125°C
LPC660AI
−40°C ≤ TJ ≤ +85°C
LPC660I
−40°C ≤ TJ ≤ +85°C
Supply Range
4.75V to 15.5V
Power Dissipation
(2)
Thermal Resistance (
θJA),
(3)
14-Pin Ceramic DIP
90°C/W
14-Pin Molded DIP
85°C/W
14-Pin SOIC
115°C/W
14-Pin Side Brazed Ceramic DIP
90°C/W
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
(2)
For operating at elevated temperatures, the device must be derated based on the thermal resistance
θJA with PD = (TJ–TA)/θJA.
(3)
All numbers apply for packages soldered directly into a PC board.
2
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: LPC660



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