BUH515 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0)

VCE = 1500 V

Tj =125

0.2

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

100

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 100 mA

700

VEBO

Emitt er-Base Voltage

(IC =0)

IE =10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =5 A

IB =1.25 A

1.5

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =5 A

IB =1.25 A

1.3

hFE

∗

DC Current Gain

IC =5 A

VCE =5 V

IC =5 A

VCE =5 V

Tj =100

RESI STIVE LO AD

St orage Time

Fall Time

VCC =400 V

IC =5 A

IB1 =1.25 A

IB2 = 2.5 A

2.7

190

3.9

280

µs

INDUCTIVE LO AD

St orage Time

Fall Time

IC = 5 A

f = 15625 Hz

IB1 =1.25 A

IB2 =-1.5 A

Vc eflybac k =1050 sin







6





2.3

350

µs

INDUCTIVE LO AD

St orage Time

Fall Time

IC = 5A

f = 31250 Hz

IB1 =1.25 A

IB2 =-1.5 A

Vc eflybac k =1200 sin







6





2.3

200

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

BUH515

2/7

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