©2004 Fairchild Semiconductor Corporation

BAV70 / 74, Rev. D1

Small Signal Diode

Absolute Maximum Ratings * T

A = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Electrical Characteristics T

A=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage

BAV70

BAV74

70

50

V

V

IF(AV)

Average Rectified Forward Current

200

mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

2.0

A

A

TSTG

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Units

PD

Power Dissipation

350

mW

RθJA

Thermal Resistance, Junction to Ambient

357

°C/W

Symbol

Parameter

Test Conditions

Min.

Max.

Units

VR

Breakdown Voltage

BAV70

BAV74

IR = 100µA

IR = 5.0µA

75

50

V

V

VF

Forward Voltage

BAV70

BAV74

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

IF = 100mA

715

855

1.0

1.25

1.0

mV

mV

V

V

V

IR

Reverse Leakage

BAV70

BAV74

VR = 25V, TA = 150°C

VR = 70V

VR = 70V, TA = 150°C

VR = 50V

VR = 50V, TA = 150°C

60

5.0

100

100

100

µA

µA

µA

nA

µA

CT

Total Capacitance

BAV70

BAV74

VR = 0V, f = 1.0MHz

VR = 0V, f = 1.0MHz

1.5

2.0

pF

pF

trr

Reverse Recovery Time

BAV70

BAV74

IF = IR = 10mA, IRR = 1.0mA,

RL = 100Ω

IF = IR = 10mA, IRR = 1.0mA,

RL = 100Ω

6.0

4.0

ns

ns

BAV70 / 74

Connection Diagram

12

3

A4

1

2

3

SOT-23

3

1

2

BAV70

A4

BAV74

JA

MARKING