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CSD18502KCS Datasheet(PDF) 5 Page - Texas Instruments

No. de pieza CSD18502KCS
Descripción Electrónicos  CSD18502KCS 40V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
Logo TI2 - Texas Instruments

CSD18502KCS Datasheet(HTML) 5 Page - Texas Instruments

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0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−75 −50 −25
0
25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
ID = 250uA
G001
Figure 4-6. Threshold Voltage vs. Temperature
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 100A
TC = 125ºC Id = 100A
G001
Figure 4-7. On-State Resistance vs. Gate-to-Source
Voltage
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
−75 −50 −25
0
25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID = 100A
G001
Figure 4-8. Normalized On-State Resistance vs.
Temperature
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
Figure 4-9. Typical Diode Forward Voltage
0.1
1
10
100
1000
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 0.6ºC/W
G001
Figure 4-10. Maximum Safe Operating Area
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
Figure 4-11. Single Pulse Unclamped Inductive
Switching
www.ti.com
CSD18502KCS
SLPS367C – OCTOBER 2011 – REVISED MARCH 2024
Copyright © 2024 Texas Instruments Incorporated
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Product Folder Links: CSD18502KCS



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