STTH16R04CT datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STTH16R04C

4/10

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

234

789

P(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

100

120

140

160

180

200

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

FM(A)

J=150°C

(Maximum values)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

J=25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case

versus pulse duration TO-220FPAB

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Zth

(j-c)/Rth(j-c)

Single pulse

TO-220AB/D²PAK

tp(s)

0.0

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Zth

(j-c)/Rth(j-c)

Single pulse

TO-220FPAB

tp(s)

Figure 5.

Peak reverse recovery current

versus dIF/dt (typical values)

Figure 6.

Reverse recovery time versus

dIF/dt (typical values)

100

1000

RM(A)

F= 8 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

100

120

140

100

1000

RR(ns)

F= 8 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

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