6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS

Supply voltage

Dual supply (–VS), (+VS)

–20

20

V

Single supply VS

40

INN, INP, REF,

FB

Signal input pins

Voltage

(–VS) – 0.5

(+VS) + 0.5

V

Current

–10

10

mA

Differential voltage between INN and INP or REF

and FB

(–VS) – 0.5

(+VS) + 0.5

V

OUT

Signal output pins

(–VS) – 0.5

(+VS) + 0.5

V

Output short-circuit(2)

Continuous

TA

Operating Temperature

–50

150

°C

TJ

Junction Temperature

175

°C

Tstg

Storage Temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Short-circuit to VS / 2.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage, VS

Single-supply

4.5

36

V

Dual-supply

±2.25

±18

Specified temperature, TA

Specified temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

INA630

UNIT

DDF (SOT-23)

8 PINS

RθJA

Junction-to-ambient thermal resistance

177.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

97.4

°C/W

RθJB

Junction-to-board thermal resistance

99.3

°C/W

ψJT

Junction-to-top characterization parameter

13.3

°C/W

ψJB

Junction-to-board characterization parameter

98.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

INA630

SBOSAI8A – MARCH 2025 – REVISED JULY 2025

www.ti.com

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