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MS85R4M1TA Datasheet(PDF) 9 Page - RAMXEED LIMITED

No. de pieza MS85R4M1TA
Descripción Electrónicos  4 M (512 K × 8) Bit
PDF  25 Pages
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Fabricante Electrónico  RAMXEED [RAMXEED LIMITED]
Página de inicio  https://www.ramxeed.com/
Logo RAMXEED - RAMXEED LIMITED

MS85R4M1TA Datasheet(HTML) 9 Page - RAMXEED LIMITED

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DS501-00093-1v1-E
9
MS85R4M1TA
Parameter
Symbol
TA≥+85°C
Unit
Value
(VDD=1.8V to 2.5V)
Value
(VDD=2.5V to 3.6V)
Min
Max
Min
Max
Read Cycle time(/CE control)
tRC
125
―
125
―
ns
Read Cycle time(Address access)
tRCA
140
―
125
―
ns
/CE Access Time
tCE
―
70
―
70
ns
Address Access Time
tAA
―
140
―
125
ns
/CE Output Data Hold time
tOH
0
―
0
―
ns
Address Access Output Data Hold
time
tOAH
20
―
20
―
ns
/CE Active Time
tCA
70
―
70
―
ns
Pre-charge Time
tPC
55
―
55
―
ns
Address Setup Time
tAS
0
―
0
―
ns
Address Hold Time
tAH
70
―
70
―
ns
/CE↑ to
Address Transition time＊1
tCAH
0
―
0
―
ns
/OE Access Time
tOE
―
35
―
20
ns
/CE Output Floating Time*1
tHZ
―
10
―
10
ns
/OE Output Floating Time
tOHZ
―
10
―
10
ns
Address Transition Time*1
tAX
―
15
―
15
ns
*1: Same parameters with the Write cycle.
(2) Write Cycle
Parameter
Symbol
TA≤+85°C
Unit
Value
(VDD=1.8V to 2.5V)
Value
(VDD=2.5V to 3.6V)
Min
Max
Min
Max
Write Cycle Time
tWC
120
―
120
―
ns
/CE Active Time
tCA
65
―
65
―
ns
/CE↓ to /WE↑ Time
tCW
65
―
65
―
ns
Pre-charge Time
tPC
55
―
55
―
ns
Write Pulse Width
tWP
20
―
20
―
ns
Address Setup Time
tAS
0
―
0
―
ns
Address Hold Time
tAH
65
―
65
―
ns
/WE↓ to /CE↑ Time
tWLC
20
―
20
―
ns
Address Transition to /WE↑ Time
tAWH
135
―
120
―
ns
/WE↑ to Address Transition Time
tWHA
0
―
0
―
ns
Data Setup Time
tDS
10
―
10
―
ns
Data Hold Time
tDH
0
―
0
―
ns
/WE Output Floating Time
tWZ
―
10
―
10
ns
/WE Output Access Time*1
tWX
10
―
10
―
ns
Write Setup Time*1
tWS
0
―
0
―
ns
Write Hold Time*1
tWH
0
―
0
―
ns
/CE Output Floating Time
tHZ
―
10
―
10
ns
Address transition Time
tAX
―
15
―
15
ns



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