MS85RC1MTY(AEC-Q100 Compliant)

DS501-00095-0v1-E

17



POWER ON/OFF SEQUENCE

When applying relatively short term VDD pulse whose peak is more than 1.7V, it is required to set falling time, tf

more than 0.4ms/V. (In case VDD rises over 1.7V and falls just after that, if this term is short, device may lose

its function.).

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



FeRAM CHARACTERISTICS

*1 : The value for Read/Write endurance apply to the total number of read and write operations per row in

FeRAM. This is because FeRAM needs writing operation after each reading operations.

*2 : Minimum values define retention time of the first reading/writing data right after shipment.

*3: Under evaluation for more than 5.9 years(+125 C).

These values are calculated by qualification results.

Parameter

Symbol

Value

Unit

Min

Max

SDA, SCL level hold time during power down

tpd

85



ns

SDA, SCL level hold time during power up

tpu

450





s

Power supply rising time

tr

0.05



ms/V

Power supply falling time

tf

0.1



ms/V

Internal regulator recovery time

tREC



450



s

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1013



Times

Operation Ambient Temperature TA   125 C

Data Retention*2

5.9*3



Years

Operation Ambient Temperature TA   125 C

19.1



Operation Ambient Temperature TA   105 C

70.4



Operation Ambient Temperature TA   85 C

0 V

SDA, SCL > VDD × 0.8 *

SDA, SCL > VDD × 0.8 *

tpd

tpu

tr

tf

VIL (Max)

VIH (Min)

VDD (Min)

VDD

SDA, SCL : Don't care

SDA, SCL

SDA, SCL

0 V

VIL (Max)

VIH (Min)

VDD (Min)

VDD

* : SDA, SCL (Max) < VDD  0.5 V