MS85RS1MTY datasheet(22/43 Pages) RAMXEED

No. de pieza	MS85RS1MTY

Descripción Electrónicos	1M (128K X 8) Bit SPI

PDF	43 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RAMXEED [RAMXEED LIMITED]

Página de inicio	https://www.ramxeed.com/

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MS85RS1MTY(AEC-Q100 Compliant)

DS501-00096-1v0-E



POWER ON/OFF SEQUENCE

In case relative short VDD pulse whose peak level is beyond 1.7 is applied, please set VDD falling time, tf,

longer than 0.4ms/V. (When VDD rises beyond 1.7V, and falls just after, if this term is very short the device

may loose its function.)

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.

Parameter

Symbol

Value

Unit

Condition

VDD

Min

Max

CS level hold time at power OFF

tpd

400



1.8V to 2.7V



2.7V to 3.6V

CS level hold time at power ON

tpu

450







Power supply rising time

0.05



ms/V



Power supply falling time

0.1



ms/V



CS >VDD

u 0.8

tpd

tpu

VIL (Max)

1.7 V

VIH (Min)

VDD (Min)

VDD

CS : don't care

CS >VDD

u 0.8

VIL (Max)

1.7 V

VIH (Min)

VDD (Min)

VDD

VSS

* : CS (Max) < VDD  0.5 V

MS85RS1MTY Datasheet(PDF) 22 Page - RAMXEED LIMITED

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