ESM765PI-800 datasheet(2/4 Pages) STMICROELECTRONICS

No. de pieza	ESM765PI-800

Descripción Electrónicos	RECOVERY RECTIFIER DIODES

PDF	4 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Symbol

Parameters

Test conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25

°CVR = VRRM

Tj = 100

°C

1mA

VF **

Forward voltage drop

Tj = 25

°CIF = 10 A

1.4

Tj = 100

°C

1.35

Pulse test : * tp = 5 ms,

δ < 2 %

** tp = 380

µs, δ < 2 %

To evaluate the conduction losses use the following equation :

P = 1.2 x IF(AV) + 0.015 x IF

(RMS)

VF = 1.2 + 0.015 IF

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Test conditions

Min.

Typ.

Max.

Unit

trr

Tj = 25

°CIF = 1A

dIF/dt = - 15A/

µs VR = 30V

300

Qrr

Tj = 25

°CIF = 10A dIF/dt = - 50A/µs VR = 200V

2.3

µC

RECOVERY CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

3.5

°C/W

THERMAL RESISTANCES

Fig. 1: Low frequency power losses versus

average current.

Fig. 2: Peak current versus form factor.

ESM765PI-800

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