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STPS160A Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STPS160A
Descripción Electrónicos  60 V, 1 A power Schottky rectifier
PDF  13 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS160A Datasheet(HTML) 3 Page - STMicroelectronics

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1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
P
(W)
F(AV)
T
δ =tp/T
tp
δ= 1
δ= 0.5
δ= 0.2
δ= 0.1
δ= 0.05
I
(A)
F(AV)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
0
25
5 0
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
(A)
F(AV)
T
δ=tp/T
tp
SM B
R
= 80 °C/ W
S
=1.5cm
th(j-a)
(CU)
2
T
(°C)
amb
SMB R
R
th(j-a)
t h(j-I)
SM A
R
=100°C/W
S
=1.5cm
th(j-a)
(CU)
2
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
P
(tp)
P
(10 µs)
ARM
ARM
0.001
0.01
0.1
1
1
10
100
1000
t (µs)
p
Figure 4. Relative variation of thermal impedance junction
to ambient versus pulse duration (SMB)
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Z
/R
th(j-a)
th(j-a)
t (s)
p
Single pulse
Figure 5. Relative variation of thermal impedance junction
to ambient versus pulse duration (SMA)
1E-2
1E-1
1E+0
1E+1
1E+2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Z
/R
th(j-a)
th(j-a)
t (s)
p
Single pulse
Figure 6. Reverse leakage current versus reverse voltage
applied (typical values)
0
5
10
15
20
25
30
35
40
45
50
55
60
1E-1
1E+0
1E+1
1E+2
1E+3
I (µA)
R
V (V)
R
T =100°C
j
T =75°C
j
T =25°C
j
STPS160
Characteristics (curves)
DS0962 - Rev 10
page 3/13



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