L99DZ80EP datasheet(21/68 Pages) STMICROELECTRONICS

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L99DZ80EP

Electrical specifications

2.7

H-bridge driver

|IOLDECV|

Undercurrent threshold to GND

VS =13.5V;

VCC =5 V;

sink

tFOL

Filter time of open-load signal

Duration of open-

load condition to set

the status bit

0.5

2.0

3.0

Table 14. Current monitoring (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Table 15. Gate drivers for the external Power-MOS (H-bridge)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Drivers for external high-side Power-MOS

IGHx(Ch)

Average charge current

(charge stage)

Tj =25°C

0.3

RGHx

On-resistance (discharge-

stage)

VSHx =0V; IGHx =50mA;

Tj =25°C



VSHx =0V; IGHx =50mA;

Tj =125 °C

810



VGHxH

Gate-on voltage

Outputs floating

VSHx +

11.5

RGSHx

Passive gate-clamp

resistance

VGHx =0.5 V



Drivers for external low-side Power-MOS

IGLx(Ch)

Average charge-current

(charge stage)

Tj =25°C

0.3

RGLx

On-resistance (discharge-

stage)

VSLx =0V; IGHx =50mA;

Tj =25°C



VSLx =0V; IGHx =50mA;

Tj =125 °C

810



VGHLx

Gate-on voltage

Outputs floating

VSLx +

11.5

RGSLx

Passive gate-clamp

resistance



Table 16. Gate drivers for the external Power-MOS switching times

Symbol

Parameter

Test condition

Min. Typ. Max.

Unit

TG(HL)xHL

Propagation delay time high to

low (switch mode)(1)

VS = 13.5 V; VSHx =0;

RG =0 ; CG =2.7 nF

1.5

µs

TG(HL)xLH

Propagation delay time low to

high (switch mode)(1)

VS = 13.5 V; VSLx =0;

RG =0 ; CG =2.7 nF

1.5

µs

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