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PM8805 Datasheet(PDF) 13 Page - STMicroelectronics |
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PM8805 Datasheet(HTML) 13 Page - STMicroelectronics |
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13 / 45 page ![]() DS12813 Rev 1 13/45 PM8805 Electrical specifications 45 3.4 Electrical characteristics (VDD=VOB=48 V, 1 nF from VCP to VDD, 100 nF on VB, TA = -40°C to 85°C unless otherwise specified(a).) a. Minimum and Maximum limits are guaranteed by test, design, or statistical correlation. Typical values represent the most likely parametric norm at TA =25 °C, and are provided for reference only. Table 6. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Undervoltage UVLO Vuvlo_rising UVLO release Measured between PoE inputs(1) VDD rising 38.0 41.5 V Vuvlo_falling UVLO lock-out Measured between PoE inputs VDD(1) falling 30.5 33.5 V Vuvlo_hyst UVLO hysteresis VDD falling 7.5 V Tduvlo_falling UVLO lock-out delay VDD falling 100 μs Input bridges Rdson_br MOSFET Ron 30.5< VDD<57V, I=1A 90 150 mΩ Vbron Bridge ON max. voltage drop 30.5< VDD<57V, I=1A 180 300 mV Vbroff Bridge OFF max. voltage drop VDD<23V, I=44mA 1.4 1.8 V Unbal Bridge to Bridge resistance unbalance 30.5< VDD<57V, I=1A, bridges ON 30 % Vbfd Backfeed voltage 100kΩ resistance between unpowered PoE inputs(1), VDD=57V 2.7 V Ileak Leakage current VDD=57V, current drawn by any bridge input(1) 25 μA ZCD_HS_thr High-side MOSFET comparator threshold Measured between any bridge input(1) and VDD -25 mV ZCD_LS_thr Low-side MOSFET comparator threshold Measured between any bridge input and relevant ground(1) 10 mV ZCD_hyst Comparators hysteresis 10 mV Td_ZCD Comparators delay 5 15 μs Charge pump(2) Vcp Charge pump voltage Measured wrt VDD 30.5< VDD<57V 10nF on VCP pin 6.8 9.8 V Icp Capacitor charging current VCP = VDD+7V 50 μA Detection and classification Von_det Signature enable Measured between PoE inputs(1) VDD rising 2.5 V Voff_det Signature disable Measured between PoE inputs(1) VDD rising 10.5 13.0 V |
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