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HCF4013B Datasheet(PDF) 4 Page - STMicroelectronics |
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HCF4013B Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C, CL = 50pF, RL = 200kΩ, typical temperature coefficient for all VDD = 0.3%/°C values, all input rise and fall time = 20ns) Val ue Symbol Parameter Test Conditions V DD (V) Min. Typ. Max. Unit t PLH,tPHL Propagation Delay Time (clock to Q or Q outputs) 5150 300 ns 10 65 130 15 45 90 t PL H Propagation Delay Time (set to Q or reset to Q) 5150 300 ns 10 65 130 15 45 90 t PHL Propagation Delay Time (set to Q or reset to Q) 5200 400 ns 10 85 170 15 60 120 t THL,tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 f CL * Maximum Clock Input Frequency 5 3.5 7 MHz 10 8 16 15 12 24 t W Cock Pulse Width 5 140 70 ns 10 60 30 15 40 20 t r,tf** Clock Input Rise or Fall Time 5 15 µs 10 4 15 1 t W Set or Reset Pulse Width 5 180 90 ns 10 80 40 15 50 25 t se tu p Data Setup Time 5 40 20 ns 10 20 10 15 15 7 * Input t r,tf = 5ns. ** If more than unit is cascaded in a parallel clocked application, tr should be made less than or equal to the sum of the fixed propagation delay time at 15pF and the transition time of the carry output driving stage for the estimated capacitive load. HCC/HFC4013B 4/11 |
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