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STTH8R03 Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH8R03 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 6 page ![]() STTH8R03G/D 4/6 0 50 100 150 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 dIF/dt(A/µs) S factor IF < 2 x IF(av) VR=200V Tj=125°C Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Tj(°C) IRM S factor Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125°C). 0 50 100 150 200 250 300 350 400 450 500 0 1 2 3 4 5 6 7 8 9 10 dIF/dt(A/µs) VFP(V) IF=IF(av) Tj=125°C Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 dIF/dt(A/µs) tfr(ns) VFR=1.1 x VF max. IF=IF(av) Tj=125°C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 S(cm²) Rth(j-a) (°C/W) D²PAK Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)(D 2PAK) |
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