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AT41533 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza AT41533
Descripción Electrónicos  Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

AT41533 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
AT41533
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 12V(Min)
· SOT-23 Package
APPLICATIONS
· General Electronic Equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation
225
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNI
T
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA, IB= 0A
12
--
--
V
ICBO
Collector-Base Cut-Off Current
VCB= 3V, IE= 0A
--
--
0.2
uA
IEBO
Emitter Cuto-ff Current
VEB= 1V, IC= 0A
--
--
1.0
uA
hFE
DC Current Gain
IC= 5mA, VCE= 5V
30
--
270


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