IRF740S datasheet(1/8 Pages) STMICROELECTRONICS

No. de pieza	IRF740S

Descripción Electrónicos	N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET

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IRF740S

N - CHANNEL 400V - 0.48

Ω -10A- D2PAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.48

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

400

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

400

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C10

A

ID

Drain Current (continuous) at Tc =100

oC6.3

A

IDM(

•)

Drain Current (pulsed)

40

A

Ptot

Tot al Dissipation at Tc =25

oC125

W

Derating F act or

1.0

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.0

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤10 A, di/dt ≤120 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

I RF740S

400 V

< 0.55

Ω

10 A

1

3

D

2PAK

TO-263

(Suffix ”T4”)

1/8

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