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STPS20100 Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS20100 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 4 page ![]() STPS20100CT 3/4 0.001 0.01 0.1 1 0 20 40 60 80 100 120 140 160 180 IM t =0.5 t(s) IM(A) Tc=25 C o Tc=50 C o Tc=110 C o Fig. 3 : Non repetitive surge peak forward current versus overload duration. (Maximum values) (Per diode) Fig. 4 : Relative variation of thermal transient impedance junction to case versus pulse duration. 0 10203040 5060708090 100 0.001 0.010 0.100 1.000 10.000 50.000 Tj=125 C o VR(V) IR(mA) Tj=75 C o Tj=50 C o Tj=100 C o Fig. 5 : Reverse leakage current versus reverse voltage applied. (Typical values) (Per diode) 110 100 100 1000 2000 VR(V) Tj=125 C o C(pF) F= 1MH z Fig. 6 : Junction capacitance versus reverse voltage applied. (Typical values) (Per diode) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I FM(A) VFM(V) Tj=125 C o Fig. 7 : Forward voltage drop versus forward current. (Maximum values) (Per diode) |
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