CY7C192
Document #: 38-05047 Rev. *D
Page 3 of 9
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested
Storage Temperature
..................................... −65°C to +150°C
Ambient Temperature with
Power Applied
.................................................. −55°C to +125°C
Supply Voltage to Ground Potential
.................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1]
........................................ −0.5V to V
CC + 0.5V
DC Input Voltage[1]
.................................... −0.5V to V
CC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................. >900V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Range
Ambient
Temperature[2]
VCC
Commercial
0
°C to +70°C
5V
± 10%
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
-15
Min
Max
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.3V
V
VIL
Input LOW Voltage[1]
−0.5
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
−5+5
μA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
−5+5
μA
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
145
mA
ISB1
Automatic CE Power Down
Current—TTL Inputs
Max. VCC, CE > VIH, VIN > VIH or
VIN < VIL, f = fMAX
30
mA
ISB2
Automatic CE Power Down
Current—CMOS Inputs
Max. VCC, CE > VCC − 0.3V,
VIN > VCC − 0.3V or VIN < 0.3V, f = 0
10
mA
Capacitance
Parameter
Description
Test Conditions
Max
Unit
CIN
[3]
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
8
pF
COUT
[3]
Output Capacitance
10
pF
Notes
1. Minimum voltage is equal to –2.0V for pulse durations of less than 20 ns.
2. TA is the case temperature.
3. Tested initially and after any design or process changes that may affect these parameters.
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