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XP3P020J Datasheet(PDF) 4 Page - YAGEO Corporation |
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XP3P020J Datasheet(HTML) 4 Page - YAGEO Corporation |
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4 / 8 page ![]() XP3P020J Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 Q VG -4.5V QGS QGD QG Charge 0.1 1 10 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) 100us 1ms 10ms DC T C =25 o C Single Pulse 0 2 4 6 8 0 4 8 12 16 20 Q G , Total Gate Charge (nC) I D = -10A V DS = -15V 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 8 16 24 32 0123 456 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS = -5V T j = -55 o C Operation in this area limited by RDS(ON) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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