LET9060C datasheet(1/5 Pages) STMICROELECTRONICS

No. de pieza	LET9060C

Descripción Electrónicos	RF POWER TRANSISTORS Ldmos Enhanced Technology

PDF	5 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

November, 4 2002

LET9060C

RF POWER TRANSISTORS

Ldmos Enhanced Technology

N-CHANNEL

ENHANCEMENT-MODE

LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 60 W WITH 17.3 dB gain @ 945 MHz

• BeO FREE PACKAGE

• HIGH GAIN

• ESD PROTECTION

DESCRIPTION

The LET9060C is an N-Channel enhancement-mode

lateral Field-Effect RF power transistor, designed for

high gain broadband, commercial and industrial

applications. It operates at 28 V in common source

mode at frequencies up to 1.0 GHz. LET9060C

boasts the excellent gain, linearity and reliability of the

ST

latest

LDMOS

technology.

Its

superior

performances make it an ideal solution for base

station applications.

PIN CONNECTION

1

3

2

1. Drain

2. Gate

3. Source

M243

epoxy sealed

ORDER CODE

LET9060C

BRANDING

LET9060C

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

7

A

PDISS

Power Dissipation (@ Tc = 70°C)

118

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

1.1

°C/W

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LET9060C Datasheet(PDF) 1 Page - STMicroelectronics

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