2SC2383 datasheet(1/2 Pages) ISC

No. de pieza	2SC2383

Descripción Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC2383

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 160V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 1.0V(Max) @IC= 500mA

APPLICATIONS

· Audio Power Amplifier

· Medium and low voltage switches and drive circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

1

A

PC

Total Power Dissipation

0.75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SC2383 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SC2383 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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