BC868 datasheet(1/3 Pages) ISC

No. de pieza	BC868

Descripción Electrónicos	Silicon NPN Power Transistor

PDF	3 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BC868

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 20V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 0.6V(Max) @IC= 2.0A

APPLICATIONS

· MOSFET drivers

· Power management

· Battery-driven devices

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

32

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2

A

ICM

Peak Collector Current

3

A

PC

Total Power Dissipation

1.35

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal Resistance,Junction to Ambient

93

℃

/W

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BC868 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

BC868 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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