STPS20120C datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STPS20120C

Characteristics

3/9

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

012

789

(W)

F(AV)

δ=tp/T

(A)

F(AV)

δ = 1

δ = 0.1

δ = 0.05

δ = 0.5

δ = 0.2

100

125

150

175

(A)

F(AV)

δ=tp/T

(°C)

amb

=15°C/W

th(j-a)

R=R

th(j-a)

th(j-c)

TO-220FPAB

TO-220AB

I²PAK

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

(TO-220AB / I2PAK)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

(TO-220FPAB)

100

120

140

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

T =25°C

T =75°C

T =125°C

t(s)

100

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

T =25°C

T =75°C

T =125°C

t(s)

STPS20120C Datasheet(PDF) 3 Page - STMicroelectronics

STPS20120C Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL