Electrical characteristics

TS861, TS862, TS864

6/19

Doc ID 6422 Rev 3

Note:

Limits are 100% production tested at 25 °C. Limits over temperature are guaranteed through

correlation and by design.

Table 5.

Electrical characteristics at VCC = +10 V, Tamb = 25 °C

(unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VIO

Input offset voltage (VICM = VCC / 2)

TS861/2/4

Tmin < T < Tmax

315

18

mV

ΔVIO

Input offset voltage drift

6

μV/°C

IIO

Input offset current(1)

Tmin < T < Tmax

1.

Maximum values including unavoidable inaccuracies of the industrial test.

1

150

300

pA

IIB

Input bias current(1)

Tmin < T < Tmax

1

300

600

pA

VOH

High level output voltage

ISOURCE =5 mA

Tmin < T < Tmax

9.6

9.45

9.8

V

VOL

Low level output voltage

ISINK =5mA

Tmin < T < Tmax

0.2

0.4

0.55

V

AVD

Large signal voltage gain(2)

2.

Design evaluation.

240

dB

CMR

Common mode rejection ratio

0 < VICM < 10 V

75

dB

SVR

Supply voltage rejection ratio

2.7 < VCC < 10 V

80

dB

ICC

Supply current per comparator

No load, output low

No load, output high

7

10

14

16

μA

TPLH

Propagation delay from output low to output high

VICM =5 V, f = 10 kHz, CL =50pF

Overdrive = 10 mV

Overdrive = 100 mV

3

0.5

µs

TPHL

Propagation delay from output high to output low

VICM =5 V, f = 10 kHz, CL =50pF

Overdrive = 10 mV

Overdrive = 100 mV

2.6

0.4

µs

TF

Fall time

f = 10 kHz, CL = 50 pF, overdrive = 100 mV

20

ns

TR

Rise time

f = 10 kHz, CL = 50 pF, overdrive = 100 mV

20

ns