AP01P06AI

-60V P-Channel Enhancement Mode MOSFET

AP01P06AI REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -250μA

-50

-

-

V

IGSS

Gate-Source Leakage

VDS= 0V, VGS= ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= -50V, VGS= 0V

-

-

-1

μA

VGS(th)

Gate-Source Threshold Voltage

VDS= VGS, ID= -250μA

-0.8

-1.5

-2.5

V

RDS(on)

Drain-Source on-State Resistance3

VGS= -10V, ID= -0.1A

-

3.5

4.5

Ω

VGS= -4.5V, ID= -0.1A

-

4.5

5.5

Ciss

Input Capacitance

VGS = 0V, VDS = -25V, f=1MHz

-

35

-

pF

Coss

Output Capacitance

-

6

-

Crss

Reverse Transfer Capacitance

-

3

-

Qg

Total Gate Charge

VGS = -10V, VDS = -25V,

ID = -

0.1A

-

2.2

-

nC

Qgs

Gate−Source Charge

-

0.3

-

Qgd

Gate−Drain Charge

-

0.2

-

td(on)

Turn-on Delay time

VGS = -10V,VDD= -25V , RG= 3Ω,

ID= -0.1A

-

13

-

ns

tr

Rise Time

-

6.5

-

td(off)

Turn-off Delay Time

-

17.5

-

tf

Fall Time

-

7.8

-

VSD

Body Diode Voltage3

IS= -0.1A, VGS= 0V

-

-

-1.3

V

IS

Continuous Source Current

-

-

-0.35

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.