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AP2N7002AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP2N7002AI
Descripción Electrónicos  60V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP2N7002AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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60V N-Channel Enhancement Mode MOSFET
Package Marking and Ordering Information
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (TJ =150℃)
TA =25℃
ID
0.3
A
TA =100℃
0.19
Drain Current-Pulsed (Note 1)
IDM
0.8
A
Maximum Power Dissipation
PD
0.35
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
℃
/W
AP2N7002AI
Description
The AP2N7002AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 60V ID =0.3A
RDS(ON) < 3Ω @ VGS=10V
ESD Rating：HBM≥2000V
Application
Battery protection
Load switch
Uninterruptible power supply
72K
AP2N7002AI
Product ID
Pack
SOT23L
Marking
Qty(PCS)
3000
AP2N7002AI Rve3.8
永源微電子科技有限公司


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