MBRB20150CT datasheet(1/2 Pages) ISC

No. de pieza	MBRB20150CT

Descripción Electrónicos	Schottky Barrier Diode

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Schottky Barrier Diode

MBRB20150CT

www.iscsemi.com

1

FEATURES

· Low Forward Voltage Drop

· Low Power Loss, High Efficiency

· High Surge Current Capability

APPLICATIONS

· Polarity Protection Diode

· Re-Circulating Diode

· Switching Diodes

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

150

V

IF(AV)

Average Rectified Forward Current

10×2

A

IFSM

Non-repetitive Peak Surge Current

(8.3ms Single Half Sine-Wave Superimposed on Rated Load)

170

A

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

5.0

℃

/W

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MBRB20150CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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Número de pieza similar - MBRB20150CT

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