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AP10G06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP10G06NF
Descripción Electrónicos  60V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP10G06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP10G06NF
60V N+P-Channel Enhancement Mode MOSFET
臺灣永源微電子科技有限公司
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP10G06NF
PDFN5*6-8L
AP10G06NF XXXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TA=25
℃
Continuous Drain Current, VGS @ 10V1
10
-9.5
A
ID@TA=70
℃
Continuous Drain Current, VGS @ 10V1
5.2
-4.3
A
IDM
Pulsed Drain Current2
30
-27
A
EAS
Single Pulse Avalanche Energy3
25.5
35.3
mJ
IAS
Avalanche Current
22.6
-26.6
A
PD@TA=25
℃
Total Power Dissipation4
1.5
1.5
W
TSTG
Storage Temperature Range
-55 to 150
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
85
℃/W
RθJC
Thermal Resistance Junction-Case1
36
36
℃/W
AP10G06NF Rve1.0
Description
The AP10G006NFuses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 60V ID =10A
RDS(ON) < 40mΩ @ VGS=10V
VDS = -60V ID =-9.5A
RDS(ON) < 70mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply


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