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AP12H02TS Datasheet(PDF) 5 Page - A POWER MICROELECTRONICS |
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AP12H02TS Datasheet(HTML) 5 Page - A POWER MICROELECTRONICS |
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5 / 7 page ![]() AP12H02TS 20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 4 8 12 16 20 24 0 50 100 150 T C , Case Temperature( o C) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =1mA 0 20 40 60 80 0 1020 3040 50 I D , Drain Current (A) T j =25 o C 2.5V V GS =4.5V . 永源微電子科技有限公司 |
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