AP20H03DF datasheet(1/7 Pages) APME

No. de pieza	AP20H03DF

Descripción Electrónicos	30V N-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP20H03DF

30V N-Channel Enhancement Mode MOSFET

AP20H03DF REV1.0

永源微電子科技有限公司

Description

The AP20H03DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =20A

RDS(ON) < 20mΩ @ VGS=10V （Type：15mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20H03DF

PDFN3*3-8L

AP20H03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current

20

A

ID@TA=70℃

Continuous Drain Current

9.9

A

IDM

Pulsed Drain Current2

60

A

PD@TA=25℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

4

℃

/W

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AP20H03DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP20H03DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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