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AP20H04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP20H04DF
Descripción Electrónicos  40V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP20H04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20H04DF
40V N+N-Channel Enhancement Mode MOSFET
AP20H04DF RVE1.0
永源微電子科技有限公司
Description
The AP20H04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =20A
RDS(ON) < 25mΩ @ VGS=10V （Type：19mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20H04DF
PDFN3*3-8L
AP20H04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25
℃
Continuous Drain Current1
20
A
ID@TA=70
℃
Continuous Drain Current1
11.6
A
IDM
Pulsed Drain Current2
32
A
EAS
Single Pulse Avalanche Energy3
13
mJ
IAS
Avalanche Current
18
A
PD@TA=25
℃
Total Power Dissipation4
1.9
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient1(t≤10s)
62
℃/W
RθJC
Thermal Resistance Junction-ambient1
8
℃/W


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