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AP20N50MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP20N50MP
Descripción Electrónicos  500V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP20N50MP
500V N-Channel Enhancement Mode MOSFET
AP20N50MP REV1.0
永源微電子科技有限公司
Description
The AP20N50MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS=500V ID=20A
RDS(ON) < 330mΩ @ VGS=10V （Type：260mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20N50MP
TO-247-3L
AP20N50MP XXX YYYY
1000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
500
V
ID
Continuous Drain Current
20
A
IDM
Pulsed Drain Current
(note1)
72
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note2)
662
mJ
IAR
Avalanche Current (note1)
18
A
EAR
Repetitive Avalanche Energy note1)
70
mJ
PD
Power Dissipation (TC = 25ºC)
34
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
3.68
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
62.5
ºC/W


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