AP60P02BD datasheet(1/7 Pages) APME

No. de pieza	AP60P02BD

Descripción Electrónicos	-20V P-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP60P02BD

-20V P-Channel Enhancement Mode MOSFET

AP60P02BD REV1.0

永源微電子科技有限公司

Description

The AP60P02BD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-60A

RDS(ON) < 8.0mΩ @ VGS=4.5V (Type：6.1mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60P02BD

TO-252-3L

AP60P02BD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -4.5V1

-60

A

ID@TC=70℃

Continuous Drain Current, VGS @ -4.5V1

-35

A

IDM

Pulsed Drain Current2

-220

A

IAS

Avalanche Current

-26.6

A

PD@TC=25℃

Total Power Dissipation3

70

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

3.2

℃/W

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AP60P02BD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP60P02BD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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