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AP75N20CF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP75N20CF
Descripción Electrónicos  200V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP75N20CF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP75N20CF
200V N-Channel Enhancement Mode MOSFET
AP75N20CF REV1.0
永源微電子科技有限公司
Description
The AP75N20CF is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 200V ID =75A
RDS(ON) < 38mΩ @ VGS=10V （Type：30mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP75N20CF
TO-220F-3L
AP70N20CF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
200
V
ID
Continuous Drain Current
75
A
IDM
Pulsed Drain Current
(note1)
280
A
VGS
Gate-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy (note2)
1800
mJ
IAR
Avalanche Current (note1)
25
A
EAR
Repetitive Avalanche Energy note1)
20
mJ
PD
Power Dissipation (TC = 25ºC)
367
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+175
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.5
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
40
ºC/W


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