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AP80P01NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP80P01NF
Descripción Electrónicos  -12V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP80P01NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80P01NF
-12V P-Channel Enhancement Mode MOSFET
AP80P01NF RVE1.0
臺灣永源微電子科技有限公司
Description
The AP80P01NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -12V
ID =-80A
RDS(ON) < 4.5m
Ω @ VGS=10V
Application
Load switch
electronic cigarette
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80P01NF
PDFN5*6-8L
AP80P01NF XXX YYYY
2500
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-12
V
VGS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous (TC=25℃)
-80
A
Drain Current
– Continuous (TC=100℃)
-54
A
IDM
Drain Current
– Pulsed1
-240
A
PD
Power Dissipation (TC=25℃)
41.67
W
Power Dissipation
– Derate above 25℃
0.33
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction to ambient
62
℃/W
RθJC
Thermal Resistance Junction to Case
3
℃/W


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